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dc.contributor.authorIonaşcu, Cristian-
dc.contributor.authorBurdi, Dănuţ-
dc.contributor.authorDimitriu, Bogdan-
dc.date.accessioned2021-09-09T07:44:14Z-
dc.date.available2021-09-09T07:44:14Z-
dc.date.issued2004-
dc.identifier.citationIonaşcu, Cristian. Designing and implementation of dual voltage, low leakage and low power bi-directional CMOS I/O circuits. Timişoara: Editura Politehnica, 2004en_US
dc.identifier.urihttp://primo.upt.ro:1701/primo-explore/search?query=any,contains,Designing%20and%20implementation%20of%20dual%20voltage,%20low%20leakage%20and%20low%20power%20bi-directional%20CMOS%20I~2FO%20circuits&tab=default_tab&search_scope=40TUT&vid=40TUT_V1&lang=ro_RO&offset=0 Link Primo-
dc.description.abstractThis paper presents the designing and implementation of the dual voltage, low leakage and low power bidirectional input-output (I/O) circuits. The proposed architecture contains a pre-driver block, an output driver and an ESD (electro-static discharge) protection block. The output driver stage was designed to be supplied with 1.8V or 3.3V (dual voltage concept) and, also, for three values of the output current driving capabilities (4mA, 8mA and 12mA). The results show that the total parasitic power consumption and leakage current are less than 160 uW/MHz and 4.10 nA, respectively.en_US
dc.language.isoenen_US
dc.publisherTimişoara : Editura Politehnicaen_US
dc.relation.ispartofseriesBuletinul ştiinţific al Universităţii „Politehnica” din Timişoara, România. Seria electronică şi telecomunicaţii, Tom 49(63), fasc. 1 (2004), p. 173-177-
dc.subjectI/Oen_US
dc.subjectESDen_US
dc.subjectHBMen_US
dc.titleDesigning and implementation of dual voltage, low leakage and low power bi-directional CMOS I/O circuits [articol]en_US
dc.typeArticleen_US
Colecţia:Articole științifice/Scientific articles

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