Designing and implementation of dual voltage, low leakage and low power bi-directional CMOS I/O circuits [articol]

Abstract

This paper presents the designing and implementation of the dual voltage, low leakage and low power bidirectional input-output (I/O) circuits. The proposed architecture contains a pre-driver block, an output driver and an ESD (electro-static discharge) protection block. The output driver stage was designed to be supplied with 1.8V or 3.3V (dual voltage concept) and, also, for three values of the output current driving capabilities (4mA, 8mA and 12mA). The results show that the total parasitic power consumption and leakage current are less than 160 uW/MHz and 4.10 nA, respectively.