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Physical basis of prediction MOS function prediction method under ionizing condition [articol]
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| dc.contributor.author | Avram, Adrian | |
| dc.contributor.author | Rusanovschi, Vitalie | |
| dc.date.accessioned | 2020-03-26T06:11:53Z | |
| dc.date.accessioned | 2021-03-01T08:44:39Z | |
| dc.date.available | 2020-03-26T06:11:53Z | |
| dc.date.available | 2021-03-01T08:44:39Z | |
| dc.date.issued | 2011 | |
| dc.identifier.citation | Avram, Adrian. Physical basis of prediction MOS function prediction method under ionizing condition. Timişoara: Editura Politehnica, 2011 | en_US |
| dc.identifier.uri | http://primo.upt.ro:1701/primo-explore/fulldisplay?docid=40TUT000128666&context=L&vid=40TUT_V1&lang=ro_RO&search_scope=40TUT&adaptor=Local%20Search%20Engine&tab=default_tab&query=any,contains,Physical%20basis%20of%20prediction%20MOS%20function%20prediction%20method%20under%20ionizing%20condition&sortby=rank&offset=0 Link Primo | |
| dc.description.abstract | Effects occurring in the active elements of integrated circuits (IC) depend on dose accumulation summary, the absorption unit defects under the action of high energy particles. Presented method refers only to predict degradation parameters due to accumulated dose of integrated circuits summary absorption. MOS structures response prediction under ionizing action will be reduced to determination of oxide charge value and surface state charge value. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Timișoara: Editura Politehnica | en_US |
| dc.relation.ispartofseries | Seria electronică şi telecomunicaţii;Tom 56(70), fasc. 1 (2011) | |
| dc.title | Physical basis of prediction MOS function prediction method under ionizing condition [articol] | en_US |
| dc.type | Article | en_US |
