dc.contributor.author |
Burdia, Dănuţ |
|
dc.contributor.author |
Comșa, Ciprian-Romeo |
|
dc.contributor.author |
Ionaşcu, Cristian |
|
dc.date.accessioned |
2021-08-30T07:28:05Z |
|
dc.date.available |
2021-08-30T07:28:05Z |
|
dc.date.issued |
2004 |
|
dc.identifier.citation |
Burdia, Dănuţ. Short-circuit power evaluation of deep submicrometer CMOS gates driving lossless transmission lines. Timişoara: Editura Politehnica, 2004 |
en_US |
dc.identifier.uri |
http://primo.upt.ro:1701/primo-explore/search?query=any,contains,Short-circuit%20power%20evaluation%20of%20deep%20submicrometer%20CMOS%20gates%20driving%20lossless%20transmission%20lines&tab=default_tab&search_scope=40TUT&vid=40TUT_V1&lang=ro_RO&offset=0 Link Primo |
|
dc.description.abstract |
In this paper the short-circuit power of a CMOS gate driving a inductive - capacitive (lossless) transmission line is investigated. The case of input signal transition time smaller than twice the transmission line propagation delay is considered. Closed-form expressions for the output voltage, short-circuit power and short-circuit to dynamic power ratio are derived. Also, a formula for calculating the transistor widths for the matched condition is obtained. The nth power law MOSFET model for short-channel devices is used. The analytical results are in very good agreement with SPICE simulations. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
Timişoara: Editura Politehnica |
en_US |
dc.relation.ispartofseries |
Buletinul ştiinţific al Universităţii „Politehnica” din Timişoara, România. Seria electronică şi telecomunicaţii, Tom 49(63), fasc. 1 (2004), p. 178-183 |
|
dc.subject |
Submicrometer CMOS gates |
en_US |
dc.subject |
Interconnections |
en_US |
dc.subject |
Transmission lines |
en_US |
dc.subject |
Short-circuit power dissipation |
en_US |
dc.title |
Short-circuit power evaluation of deep submicrometer CMOS gates driving lossless transmission lines [articol] |
en_US |
dc.type |
Article |
en_US |