Please use this identifier to cite or link to this item: https://dspace.upt.ro/xmlui/handle/123456789/4058
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dc.contributor.authorIonaşcu, Cristian-
dc.contributor.authorBurdia, Dănuţ-
dc.contributor.authorDimitriu, Bogdan-
dc.date.accessioned2021-12-08T15:30:04Z-
dc.date.available2021-12-08T15:30:04Z-
dc.date.issued2004-
dc.identifier.citationIonaşcu, Cristian. Compensated CMOS delay cells over process, voltage and temperature variations. Timişoara: Editura Politehnica, 2004en_US
dc.identifier.urihttp://primo.upt.ro:1701/primo-explore/search?query=any,contains,Compensated%20CMOS%20delay%20cells%20over%20process,%20voltage%20and%20temperature%20variations&tab=default_tab&search_scope=40TUT&vid=40TUT_V1&lang=ro_RO&offset=0 Link Primo-
dc.description.abstractOne of the challenges in digital systems is the distribution of the generated on-chip clock with a small uncertainty. In this paper a high performance compensated delay cell concept it is presented. It is based on a current reference, which is almost insensitive to PVT (process, voltage and temperature) variations. Using this current reference the delay value of the compensated delay cell it is nearly constant over temperature range (-55C to 125C) and voltage range (1.62V to 1.98V). Post layout simulation results shows a ratio for the value of the delay between best case corner and worst case corner smaller than 1.5.en_US
dc.language.isoenen_US
dc.publisherTimişoara : Editura Politehnicaen_US
dc.relation.ispartofseriesBuletinul ştiinţific al Universităţii „Politehnica” din Timişoara, România. Seria electronică şi telecomunicaţii, Tom 49(63), fasc. 1 (2004), p. 159-163-
dc.titleCompensated CMOS delay cells over process, voltage and temperature variations [articol]en_US
dc.typeArticleen_US
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