Please use this identifier to cite or link to this item: https://dspace.upt.ro/xmlui/handle/123456789/7091
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dc.contributor.authorBalakrishnan, Prabakaran-
dc.contributor.authorChenniappan, Vivekanandan-
dc.date.accessioned2025-02-05T09:05:02Z-
dc.date.available2025-02-05T09:05:02Z-
dc.date.issued2019-
dc.identifier.citationBalakrishnan, Prabakaran; Chenniappan, Vivekanandan. Analysis of doping elements for photo diode. Timişoara: Editura Politehnica, 2019.en_US
dc.identifier.issn1582-4594-
dc.identifier.urihttps://dspace.upt.ro/xmlui/handle/123456789/7091-
dc.description.abstractAn analysis was done on the type of doping elements which can be added with Silicon material. Pure Silicon has four electrons in valence band. If pure Silicon is doped with bivalent element like Calcium as acceptor impurity, this provides two free protons in the conduction band of the Si Crystal and this can be used as p-type material for the photo diode. If pure Silicon is doped with hexavalent element like Sulfur as donor impurity, this forms two electron in the conduction band of the Si Crystal and this can be used as n-type material for the photo diode. By this method, the number of pairs of free electron and free proton can be increased in the photo diode.en_US
dc.language.isoenen_US
dc.publisherTimișoara : Editura Politehnicaen_US
dc.relation.ispartofseriesJournal of Electrical Engineering;Vol 19 No 2-
dc.subjectSiliconen_US
dc.subjectValence banden_US
dc.subjectConduction banden_US
dc.subjectPhoto diode,.en_US
dc.subjectImpuritiesen_US
dc.subjectDopingen_US
dc.titleAnalysis of doping elements for photo diode [articol]en_US
dc.typeArticleen_US
Appears in Collections:Articole științifice/Scientific articles

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