Please use this identifier to cite or link to this item: https://dspace.upt.ro/xmlui/handle/123456789/7091
Title: Analysis of doping elements for photo diode [articol]
Authors: Balakrishnan, Prabakaran
Chenniappan, Vivekanandan
Subjects: Silicon
Valence band
Conduction band
Photo diode,.
Impurities
Doping
Issue Date: 2019
Publisher: Timișoara : Editura Politehnica
Citation: Balakrishnan, Prabakaran; Chenniappan, Vivekanandan. Analysis of doping elements for photo diode. Timişoara: Editura Politehnica, 2019.
Series/Report no.: Journal of Electrical Engineering;Vol 19 No 2
Abstract: An analysis was done on the type of doping elements which can be added with Silicon material. Pure Silicon has four electrons in valence band. If pure Silicon is doped with bivalent element like Calcium as acceptor impurity, this provides two free protons in the conduction band of the Si Crystal and this can be used as p-type material for the photo diode. If pure Silicon is doped with hexavalent element like Sulfur as donor impurity, this forms two electron in the conduction band of the Si Crystal and this can be used as n-type material for the photo diode. By this method, the number of pairs of free electron and free proton can be increased in the photo diode.
URI: https://dspace.upt.ro/xmlui/handle/123456789/7091
ISSN: 1582-4594
Appears in Collections:Articole științifice/Scientific articles

Files in This Item:
File Description SizeFormat 
BUPT_ART_Balakrishnan_f.pdf380.91 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.