Abstract:
In this paper, an accurate IGBT model is presented. This model is based on the IGBT physic structure. It uses an equivalent circuit which combines an MOSFET, controlled by a voltage controlled voltage source, in series with a diode. All its parameters can be extracted easily from the datasheet information given by the manufacturers. The proposed model presents a good agreement with the measurements. It gives an average error less than 9% for the output characteristics and less than 7% for the transfer characteristic. Moreover, the model is simple and can be implemented in any SPICE-based circuit simulator. A description of the model and the parameter extraction procedure will be provided along.
