Short-circuit power evaluation of deep submicrometer CMOS gates driving lossless transmission lines [articol]

Abstract

In this paper the short-circuit power of a CMOS gate driving a inductive - capacitive (lossless) transmission line is investigated. The case of input signal transition time smaller than twice the transmission line propagation delay is considered. Closed-form expressions for the output voltage, short-circuit power and short-circuit to dynamic power ratio are derived. Also, a formula for calculating the transistor widths for the matched condition is obtained. The nth power law MOSFET model for short-channel devices is used. The analytical results are in very good agreement with SPICE simulations.