Utilizaţi acest identificator pentru a cita sau a face link la acest document:
https://dspace.upt.ro/xmlui/handle/123456789/6723
Titlu: | Analysis of standby leakage power reduction by v body control system for core devices [articol] |
Autori: | Venkatesan, R.S. Ram Prasad, A.V. |
Subiecte: | Standby leakage power Sleepy Lector Vbody control system Power consumption Core Devices Electronics devices |
Data publicării: | 2019 |
Editura: | Timișoara : Editura Politehnica |
Citare: | Venkatesani, R.S.; Ram Prasad, A.V.: Analysis of standby leakage power reduction by v body control system for core devices. Timişoara: Editura Politehnica, 2019. |
Serie/Nr. raport: | Journal of Electrical Engineering;Vol 19 No 5 |
Abstract: | In current technology of Very large scale Integration (VLSI) has many advancement and support high performance computing, core devices and consumer electronics. The introduced new VLSI technology reduces size of transistor, results in powerful and compact wireless devices. The Control of leakage power consumption is a major difficulty one which faced in technology of CMOS circuit design and implementation, especially in handheld devices like cellular phones and PDA’s. Miniaturized electronics have the leakage current in the active and standby mode due to sub threshold leakage that causes the high power dissipation. There are several works have been carried out to achieve low power consumption in CMOS VLSI circuits. In order to resolve this problem, proposed research work introduced a Vbody control system based on the Sleepy Lector concept to reduce standby leakage power of CMOS that generates an optimal reverse body-bias voltage from leakage monitoring circuit. In addition to, Vbody control system that comprises of several clocking algorithms and techniques like Clock Gating (CG), Energy Recovery Clock (ERC), and Clock enable Sleepy Lector and Clock boosting Sleepy Lector. Sleepy Lector reduces leakage current by introducing sleep transistors and leakage controlled transistor (LCT). Energy recovery circuit controls current flow by setting low voltage drop across the device. Clock gating offers reduction of clock power. The proposed optimal Vbody control systems are implemented and simulated in HSPICE using 32nm N-MOSFET technology. The results are evaluated using ISCAS85 benchmark circuits for two different operating temperatures 25oC and 100oC. The results obtained with these implementations are compared to analyze for better performance. The maximum reduction in leakage power consumption of the proposed methods CESL, CGSL, CBSL and ERCSL from the existing work, are 92.33%, 99.41%, 99.70% and 99.93% respectively. |
URI: | https://dspace.upt.ro/xmlui/handle/123456789/6723 |
ISSN: | 1582-4594 |
Colecţia: | Articole științifice/Scientific articles |
Fişierele documentului:
Fişier | Descriere | Mărime | Format | |
---|---|---|---|---|
BUPT_ART_Venkatesan_f.pdf | 953.04 kB | Adobe PDF | Vizualizare/Deschidere |
Documentele din DSpace sunt protejate de legea dreptului de autor, cu toate drepturile rezervate, mai puţin cele indicate în mod explicit.